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Auflistung nach Schlagwort "Molecular beam epitaxy"

Anzeige der Dokumente 1-6 von 6

Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AIGaN quantum well

Kamata, N.; Klausing, H.; Fedler, F.; Mistele, D.; Aderhold, J.; Semchinova, O.K.; Graul, J.; Someya, T.; Arakawa, Y. (Cambridge : Cambridge University Press, 2004)

In order to improve the crystal quality of GaN-based light emitting devices, photoluminescence (PL) characterization of below-gap states in plasma assisted MBE-grown GaN/AlGaN quantum well (QW) structures has been done by ...
Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation

Roy Chaudhuri, A.; Fissel, Andreas; Osten, Hans Jörg (Cambridge : Cambridge University Press, 2017)

Epitaxial layers of insulating binary lanthanide oxides have been considered as potential alternative to conventional SiO2 for gate dielectric application in future Si-based MOSFET devices, which was investigated in more ...
Epitaxie und Charakterisierung von neuartigen Halbleiter-Heterostrukturen auf Basis von unterschiedlichen Strukturtypen des Siliziums

Krügener, Jan (Hannover : Gottfried Wilhelm Leibniz Universität Hannover, 2012)

[no abstract]
Longitudinal conductivity of LaF3/SrF2 multilayer heterostructures

Vergentev, Tikkhon; Banshchikov, Alexander; Filimonov, Alexey; Koroleva, Ekaterina; Sokolov, Nikolay; Wurz, Marc Christopher (Abingdon : Taylor and Francis Ltd., 2016)

LaF3/SrF2 multilayer heterostructures with thicknesses of individual layers in the range 5-100 nm have been grown on MgO(100) substrates using molecular beam epitaxy. The longitudinal conductivity of the films has been ...
Metal semiconductor metal photodiodes based on all-epitaxial Ge-on-insulator-on-Si(111), grown by molecular beam epitaxy

Pokharia, R.S.; Khiangte, K.R.; Rathore, J.S.; Schmidt, J.; Osten, H.J.; Laha, A.; Mahapatra, S. (Bellingham, Wash. : SPIE, 2019)

We report on the fabrication and characterisation of an all-epitaxial Germanium-on-Insulator (GOI) Metal-Semiconductor-Metal (MSM) photodetector. The MSM photodetector is fabricated on a (111)-oriented epitaxial Ge layer, ...
Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

Hapke-Wurst, I.; Zeitler, U.; Keyser, U.F.; Haug, Rolf J.; Pierz, Klaus; Ma, Z. (College Park, MD : American Institute of Physics, 2003)

A study was conducted on the onset voltage of resonant tunneling through indium arsenide (InAs) quantum dots by growth parameters. It was found that the onset voltage of the first step decreased from 200 mV to 0 with ...

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Auflistung nach Schlagwort "Molecular beam epitaxy"

Auflistung nach Schlagwort "Molecular beam epitaxy"

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